SiC and GaN are promising alternatives, with much larger band gaps and breakdown voltages, as much as 10 times larger than ...

Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This ...

while control parameters such as lattice and polarity mismatch with the film remain almost unchanged," Eva Benckiser, senior author of the paper, told Phys.org. To directionally imprint slight ...